US 2016/0260797 A1 · SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

Abstract

A semiconductor device includes first semiconductor regions of a first conductivity type spaced apart from each other and second semiconductor regions of a second conductivity type between adjacent first semiconductor regions. At least one second semiconductor region includes a void having at least one outer surface with a crystal plane orientation of (100). A third semiconductor region of the second conductivity type is on each second semiconductor region and a fourth semiconductor region of the first conductivity type is on the third semiconductor region. A gate electrode on is disposed on each first semiconductor region to be adjacent to a third semiconductor region via a gate insulation layer.

Claims20

Dependent claims

A semiconductor device, comprising:

a plurality of first semiconductor regions of a first conductivity type spaced apart along a first direction and extending in a second direction intersecting the first direction;
a plurality of second semiconductor regions of a second conductivity type extending in the second direction, each second semiconductor region being between adjacent first semiconductor regions along the first direction, at least one second semiconductor region including a void having at least one outer surface having a crystal plane orientation of (100);
a third semiconductor region of the second conductivity type on each second semiconductor region;
a fourth semiconductor region of the first conductivity type on the third semiconductor region;
and
a gate electrode on each first semiconductor region and adjacent to the third semiconductor region via a gate insulation layer.

3 more elements

Dependencies are inferred from the claim text.

Semiconductor device and method of manufacturing semiconductor device

Life of this patent

Semiconductor device and method of manufacturing semiconductor device

Life of this patent

Abstract

Claims20