Non-volatile resistive random access memory device

A resistive random access memory device, comprising:

• a first wiring extending in a first direction;
• a first ion source layer, which is provided in a first portion on the first wiring, and has a first ion source;
• a first variable resistance layer provided on the first ion source layer;
• a second wiring, which is provided on the first variable resistance layer, faces the first portion, and extends in a second direction different from the first direction;
• a second variable resistance layer provided in a second portion on the second wiring;
• a second ion source layer, which is provided on the second variable resistance layer, and has a second ion source and a second barrier metal;
• and
• a third wiring, which is provided on the second ion source layer, faces the second portion, and extends in the first direction,
• the second ion source layer having an upper surface which is rougher as compared with the first ion source layer.