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US 2016/0260776 A1Published application
Replacement materials processes for forming cross point memory
AssigneeMicron Technology, Inc.
InventorsJong-Won Lee, Gianpaolo Spadini, Stephen W. Russell, Derchang Kau
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Abstract
Methods of forming memory cells comprising phase change and/or chalcogenide materials are disclosed. In one aspect, the method includes providing a lower line stack extending in a first direction, the lower line stack comprising a sacrificial line over a lower conductive line. The method further includes forming a chalcogenide line extending in the first direction by selectively removing the sacrificial material of the sacrificial line and replacing the sacrificial line with a chalcogenide material.
Claims21
(canceled)
A method, comprising:
- forming a first line stack oriented in a first direction, the first line stack including a first chalcogenide line over a first conductive line;
- and
- forming a second line stack oriented in a second direction different from the first direction, the second line stack positioned above the first line stack and including a sacrificial line.
A method, comprising:
- forming a first line stack oriented in a first direction, wherein the first line stack includes a sacrificial line over a first conductive line;
- forming a chalcogenide line extending in the first direction by removing the sacrificial line and replacing material of the sacrificial line;
- and
- forming a second line stack overlaying the first line stack and oriented in a second direction different than the first direction.
1 more element
A method, comprising:
- forming a first line stack oriented in a first direction and including a first chalcogenide line over a first conductive line;
- and
- forming an sacrificial line oriented in a second direction different from the first direction and positioned above the first line stack;
- and
- forming a second conductive line oriented in the second direction by replacing the sacrificial line.
2 more elements
Dependencies are inferred from the claim text.