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US 2016/0260773 A1Published application
Magnetoresistive element, method of manufacturing magnetoresistive element, and memory device
AssigneeKabushiki Kaisha Toshiba
InventorsEiji KITAGAWA, Minoru AMANO
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Abstract
According to one embodiment, a magnetoresistive element includes a first magnetic layer, an insulating layer on the first magnetic layer, a second magnetic layer on the insulating layer, and an aluminum boride layer on the second magnetic layer.
Claims25
A magnetoresistive element comprising:
- a first magnetic layer;
- an insulating layer on the first magnetic layer;
- a second magnetic layer on the insulating layer;
- and
- an aluminum boride layer on the second magnetic layer.
2 more elements
A magnetoresistive element comprising:
- a first magnetic layer;
- an insulating layer on the first magnetic layer;
- a second magnetic layer on the insulating layer;
- and
- a heat producing layer on the second magnetic layer, the heat producing layer having a band gap of 1 eV or less.
2 more elements
A magnetoresistive element comprising:
- a first magnetic layer;
- an insulating layer on the first magnetic layer;
- a second magnetic layer on the insulating layer;
- and
- a photoelectric conversion layer on the second magnetic layer.
2 more elements
Dependencies are inferred from the claim text.