US 2016/0260772 A1 · SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SAME

Abstract

To provide a magnetoresistance effect element configuring MRAM by dry etching and thereby processing a stacked film including magnetic layers, in order to prevent a leakage current from flowing between the magnetic layers, that is, magnetic free layer and magnetic pinned layer which configure a magnetic tunnel junction (MTJ) via a metal deposit that has attached to the side wall of the MTJ. After formation of the magnetoresistance effect element by dry etching, plasma treatment is performed in a gas atmosphere containing carbon and oxygen to remove a metal deposit attached to the magnetoresistance effect element. By this plasma treatment, oxide films are formed on the side walls of the magnetic free layer and the magnetic pinned layer, respectively.

Claims15

Dependent claims

A method of manufacturing a semiconductor device equipped with a memory cell including a magnetoresistance effect element, comprising the steps of:

(a) stacking a first magnetic layer, an oxidized magnetic layer, and a second magnetic layer successively to form a stacked film;
(b) processing the first magnetic layer, the oxidized magnetic layer, and the second magnetic layer by first anisotropic etching to form the magnetoresistance effect element having the stacked film;
and
(c) subjecting the magnetoresistance effect element to plasma treatment in an atmosphere of a gas containing carbon and oxygen.

1 more element

Dependencies are inferred from the claim text.

Semiconductor device and method of manufacturing same

Life of this patent

Semiconductor device and method of manufacturing same

Life of this patent

Abstract

Claims15