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US 2016/0260770 A1Published application
Method for fabricating image sensor device
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorYueh-Chuan LEE
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Abstract
An image sensor device includes a silicon-based substrate, a silicon-germanium epitaxy layer, an isolation feature, an active pixel cell and a logic circuit. The silicon-germanium epitaxy layer is on the silicon-based substrate, in which the silicon-germanium epitaxy layer has a composition of Si1-xGex, where 0<x<1. The isolation feature is disposed in the silicon-germanium epitaxy layer to define a pixel region and a periphery region of the silicon-germanium epitaxy layer. The active pixel cell is disposed in the pixel region of the silicon-germanium epitaxy layer. The logic circuit is disposed in the periphery region.
Claims20
A method for fabricating an image sensor device, the method comprising:
- providing a silicon-based substrate, wherein the silicon-based substrate has a top surface and a bottom surface opposite to the top surface of the silicon-based substrate;
- forming a silicon-germanium epitaxy layer on the silicon-based substrate and connected to the top surface of the silicon-based substrate, wherein the silicon-germanium epitaxy layer has a top surface and a bottom surface opposite to the top surface of the silicon-germanium epitaxy layer, the silicon-germanium epitaxy layer is formed from Si1-xGex, where 0<x<1, and x is constant from the bottom surface of the silicon-germanium epitaxy layer to the top surface of the silicon-germanium epitaxy layer, wherein the silicon-based substrate is formed from silicon or Si1-yGey, where 0<y<x, and y is constant or is increasing from the bottom surface of the silicon-based substrate to the top surface of the silicon-based substrate;
- forming an isolation feature in the silicon-germanium epitaxy layer and between a pixel region and a periphery region of the silicon-germanium epitaxy layer, wherein the isolation feature extends from the silicon-based substrate to the top surface of the silicon-germanium epitaxy layer;
- and
- forming an active pixel cell and a logic circuit in the pixel region and in the periphery region of the silicon-germanium epitaxy layer respectively.
2 more elements
A method for fabricating an image sensor device, the method comprising:
- providing a silicon-based substrate, wherein the silicon-based substrate has a top surface and a bottom surface opposite to the top surface of the silicon-based substrate;
- forming a silicon-germanium epitaxy layer on the silicon-based substrate, wherein the silicon-germanium epitaxy layer has a top surface and a bottom surface opposite to the top surface of the silicon-germanium epitaxy layer, and the bottom surface of the silicon-germanium epitaxy layer is connected to the top surface of the silicon-based substrate, wherein the silicon-germanium epitaxy layer is formed from Si1-xGex, where 0<x<1, and x is increasing from the bottom surface of the silicon-germanium epitaxy layer to the top surface of the silicon-germanium epitaxy layer, wherein the silicon-based substrate is formed from silicon or Si1-yGey, where 0<y<x, and y is constant or is increasing from the bottom surface of the silicon-based substrate to the top surface of the silicon-based substrate;
- forming an isolation feature in the silicon-germanium epitaxy layer and between a pixel region and a periphery region of the silicon-germanium epitaxy layer, wherein the isolation feature extends from the silicon-based substrate to the top surface of the silicon-germanium epitaxy layer;
- and
- forming an active pixel cell and a logic circuit in the pixel region and in the periphery region of the silicon-germanium epitaxy layer respectively.
2 more elements
A method for fabricating an image sensor device, the method comprising:
- providing a silicon-based substrate, wherein the silicon-based substrate has a top surface and a bottom surface opposite to the top surface of the silicon-based substrate;
- forming a silicon-germanium epitaxy layer on the silicon-based substrate, wherein the silicon-germanium epitaxy layer has a top surface and a bottom surface opposite to the top surface of the silicon-germanium epitaxy layer, and the bottom surface of the silicon-germanium epitaxy layer is connected to the top surface of the silicon-based substrate, wherein the silicon-germanium epitaxy layer is formed from Si1-xGex, where 0<x≦0.05, and x is increasing from the bottom surface of the silicon-germanium epitaxy layer to the top surface of the silicon-germanium epitaxy layer, wherein the silicon-based substrate is formed from Si1-yGey, where 0<y<x, and y is increasing from the bottom surface of the silicon-based substrate to the top surface of the silicon-based substrate;
- forming an isolation feature in the silicon-germanium epitaxy layer and between a pixel region and a periphery region of the silicon-germanium epitaxy layer, wherein the isolation feature extends from the silicon-based substrate to the top surface of the silicon-germanium epitaxy layer;
- and
- forming an active pixel cell and a logic circuit in the pixel region and in the periphery region of the silicon-germanium epitaxy layer respectively.
2 more elements
Dependencies are inferred from the claim text.