Dual active layer semiconductor device and method of manufacturing the same

10) A method of manufacturing a semiconductor device, the method comprising:

• providing a transistor, wherein providing the transistor comprises:
• providing a gate metal layer;
• providing a transistor composite active layer, wherein providing the transistor composite active layer comprises:
• providing a first active layer over the gate metal layer;
• and
• providing a second active layer over the first active layer;
• and
• providing one or more contact elements over the transistor composite active layer;
• and
• providing one or more semiconductor elements over the transistor, wherein providing the one or more semiconductor elements comprises:
• providing a N-type layer over the transistor;
• providing an I layer over the N-type layer;
• and
• providing a P-type layer over the I layer.

19) A semiconductor device comprising:

• a substrate assembly comprising a flexible substrate;
• a transistor over the flexible substrate, the transistor comprising multiple active layers comprising a first active layer and a second active layer over the first active layer;
• and
• a photodiode over the transistor, the photodiode comprising:
• an N-type layer over the transistor;
• an I layer over the N-type layer;
• and
• a P-type layer over the I layer.