Thin film transistor substrate and method of manufacturing the same

A thin film transistor substrate comprising:

• a switching element comprising a gate electrode electrically connected to a gate line extending in a first direction, an active pattern overlapping with the gate electrode, a source electrode disposed on the active pattern and electrically connected to a data line extending in a second direction crossing the first direction, and a drain electrode spaced apart from the source electrode;
• an organic layer disposed on the switching element;
• a first electrode disposed on the organic layer;
• a second electrode overlapping with the first electrode, and electrically connected to the drain electrode;
• a passivation layer disposed between the first electrode and the second electrode to insulate the first electrode and the second electrode, and comprising a contact hole exposing a portion of the drain electrode and a portion of the organic layer;
• and
• a covering pattern disposed in the contact hole to cover an exposed portion of the organic layer.

A method manufacturing a thin film transistor substrate, the method comprising:

• forming a gate metal pattern on a base substrate, the gate metal pattern comprising a gate line extending in a first direction and a gate electrode electrically connected to the gate line;
• forming an active pattern overlapping with the gate electrode;
• forming a data metal pattern on the active pattern, the data metal pattern comprising a data line extending in a second direction crossing the first direction, a source electrode electrically connected with the gate line and a drain electrode spaced apart from the source electrode;
• forming an organic layer on the date metal pattern;
• forming a first electrode on the organic layer;
• forming a passivation layer on the first electrode;
• etching the passivation layer by using a power having more than 7 kW and less than 13 kW to form a contact hole exposing a portion of the drain electrode and a portion of the organic layer;
• and
• forming a second electrode electrically connected to the drain electrode on the passivation layer.