Thin film transistor and display panel including the same
AssigneeInnolux Corporation
InventorsHsin-Hung LIN, Jung-Fang CHANG, Ker-Yih KAO
Life of this patent
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AssigneeInnolux Corporation
InventorsHsin-Hung LIN, Jung-Fang CHANG, Ker-Yih KAO
Estimating the term…
A thin film transistor is provided, which includes a gate electrode on a substrate; a channel layer overlapping the gate electrode; a dielectric layer between the gate electrode and the channel layer; a source electrode and a drain electrode electrically connecting to the channel layer; a passivation layer overlying the source electrode, the drain electrode, and the gate dielectric layer, wherein the channel layer includes two contact portions being in contact with the source electrode and the drain electrode, respectively, and a non-contact portion located between the two contact portions, and wherein one of the two contact portions has a first thickness in a first direction perpendicular to a surface of the substrate, and the non-contact portion has a second thickness less than the first thickness in the first direction.
A thin film transistor, comprising:
A display panel, comprising:
Dependencies are inferred from the claim text.