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US 2016/0260741 A1Published application
Semiconductor devices having fins, and methods of forming semiconductor devices having fins
AssigneesSTMicroelectronics S.r.l., International Business Machines Corporation, Globalfoundries Inc.
InventorsQing Liu, Chun-Chen Yeh, Ruilong Xie, Xiuyu Cai, Kejia Wang
Life of this patent
Estimating the term…
Abstract
In forming a finFET, a selective nitridation process is used during spacer formation on the gate to support a finer fin pitch than could be achieved using traditional spacer deposition processes. The spacer formation may also allow precise control over formation of source and drain junctions.
Claims25
A semiconductor processing method, comprising:
- forming a protective layer on a semiconductor fin supported by a substrate;
- forming a gate structure at least partially surrounding a channel portion of the semiconductor fin, said gate structure separated from the channel portion by the protective layer;
- and
- forming a spacer layer on the gate structure and semiconductor fin, said spacer layer having a first thickness on the gate structure and a second thickness on the semiconductor fin, said second thickness being less than the first thickness, wherein forming the spacer layer comprises:
- depositing a first sub-layer with a third thickness on sidewalls of the gate structure and a fourth thickness on the semiconductor fin, said fourth thickness being less than the third thickness;
- and
- depositing a second sub-layer over the first sub-layer on the gate structure and on the semiconductor fin.
4 more elements
A semiconductor device, comprising:
- a semiconductor fin on a substrate;
- a protective layer covering the semiconductor fin;
- a gate structure at least partially surrounding a channel portion of the semiconductor fin;
- and
- a first sub-layer formed over the substrate with a first thickness on the gate structure and a second thickness on the semiconductor fin, the second thickness being less than the first thickness;
- and
- a second sub-layer formed over the substrate on the gate structure and on the semiconductor fin;
- the first and second sub-layers forming a spacer layer having a third thickness on the gate structure and a fourth thickness on the semiconductor fin, said fourth thickness being less than the third thickness.
5 more elements
A semiconductor processing method, comprising:
- forming an oxide layer on a pair of adjacent semiconductor fins supported by a substrate;
- forming a semiconductor gate structure at least partially surrounding a channel portion of each semiconductor fin, said semiconductor gate structure separated from the channel portions by the oxide layer;
- and
- forming a spacer layer on said walls of the semiconductor gate structure, comprising:
- performing a selective nitridation process to deposit a nitride layer on the sidewalls of the semiconductor gate structure with a first thickness and deposit the nitride layer on the oxide layer present on source and drain portions of the semiconductor fin on opposite sides of the channel portion with a second thickness, the second thickness being less than the first thickness;
- depositing an additional layer on the nitride layer and on the pair of semiconductor fins;
- wherein the nitride layer and additional layer form a spacer layer having a third thickness on the semiconductor gate structure and a fourth thickness on the pair of semiconductor fins.
4 more elements
Dependencies are inferred from the claim text.