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US 2016/0260735 A1Published application
Semiconductor device and method of manufacturing the same
AssigneeSK hynix Inc.
InventorsHyun Ho LEE, Jong Man KIM
Life of this patent
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Abstract
Disclosed is a semiconductor device, including: stack structures including interlayer insulating patterns and conductive line patterns, which are alternately stacked, and separated by a first slit; string pillars passing through the stack structures; and dummy holes passing through top portions of the stack structures to be spaced apart from bottom surface of the stack structures and disposed between the string pillars.
Claims20
A semiconductor device, comprising:
- stack structures including interlayer insulating patterns and conductive line patterns and separated from each other by a first slit, wherein the interlayer insulating patterns and the conductive line patterns are alternately stacked;
- string pillars passing through the stack structures;
- and
- dummy holes passing through top portions of the stack structures, spaced apart from bottom surfaces of the stack structures, and disposed between the string pillars.
1 more element
A method of manufacturing semiconductor device, comprising:
- alternately stacking interlayer insulating layers and sacrificial layers;
- forming string pillars passing through the interlayer insulating layers and the sacrificial layers;
- forming a first slit and dummy holes each passing through the interlayer insulating layers and the sacrificial layers, wherein the first slit has a different depth from the dummy holes;
- opening line pattern areas by removing the sacrificial layers through the first slit and the dummy holes;
- and
- forming conductive line patterns within the line pattern area.
3 more elements
The method of clam 12, wherein the forming of the string pillars includes:
- forming channel holes passing through the interlayer insulating layers and the sacrificial layers;
- forming a memory layer over a lateral wall of each of the channel holes;
- and
- forming a channel pillar inside each of the channel holes and over the memory layer.
1 more element
Dependencies are inferred from the claim text.