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US 2016/0260731 A1Published application
Semiconductor device, manufacturing method for a semiconductor device, and nontransitory computer readable medium storing a pattern generating program
AssigneeKabushiki Kaisha Toshiba
InventorsSatoshi NAGAI, Eiji YONEDA, Kentaro MATSUNAGA, Koutarou SHO
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Abstract
According to one embodiment, a semiconductor device includes a stacked body of N (N is an integer of 2 or more) layers stacked on a semiconductor substrate and openings different in depth surrounded by the stacked body and separated from each other.
Claims20
A semiconductor device, comprising:
- a stacked body of N (N is an integer of 2 or more) layers stacked on a semiconductor substrate;
- and
- openings different in depth surrounded by the stacked body and separated from each other.
A manufacturing method for a semiconductor device, comprising:
- forming a three-dimensional structure on a semiconductor substrate;
- forming a guide pattern corresponding to openings in the three-dimensional structure on the three-dimensional structure;
- forming resist films different in thickness divided by the guide pattern on the three-dimensional structure;
- and
- etching the three-dimensional structure via the resist films such that the openings are different in depth.
2 more elements
A nontransitory computer readable medium storing a pattern generating program to cause a computer to perform:
- extracting a stepped region in a three-dimensional structure;
- calculating a guide region around the stepped region;
- and
- arranging a guide pattern in the guide region.
1 more element
A nontransitory computer readable medium storing a pattern generating program to cause a computer to perform:
- acquiring depth information of openings different in depth in a three-dimensional structure;
- calculating a film thickness distribution of a resist necessary for obtaining the depth;
- calculating volume of the resist necessary for obtaining the film thickness distribution in each of the openings;
- and
- generating an extracted pattern of the resist necessary for obtaining the volume in each of the openings.
2 more elements
Dependencies are inferred from the claim text.