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US 2016/0260719 A1Published application
Integrated circuit devices including fin shapes
AssigneeSamsung Electronics Co., Ltd.
InventorJae-yup Chung
Life of this patent
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Abstract
Integrated circuit devices are provided. An integrated circuit device includes a substrate having first and second fin-shaped Field Effect Transistor (FinFET) bodies protruding from the substrate. The first and second FinFET bodies have different respective first and second shapes in a first region and a second region, respectively, of the integrated circuit device.
Claims21
An integrated circuit device comprising:
- a substrate comprising a logic area and a memory area;
- a first fin-shaped active area in the logic area and comprising a first top portion protruding a first distance from a surface of the substrate in a direction;
- and
- a second fin-shaped active area in the memory area and comprising a second top portion protruding a second distance from the surface of the substrate in the direction, wherein the second distance is longer than the first distance.
1 more element
An integrated circuit device comprising:
- a substrate comprising a first area and a second area;
- a pair of first fin-shaped active areas extending in parallel to each other in the first area and spaced apart by a first distance, each of the pair of first fin-shaped active areas comprising a first top portion protruding from the substrate in a direction;
- and
- a pair of second fin-shaped active areas extending in parallel to each other in the second area and spaced apart by a second distance longer than the first distance, each of the pair of second fin-shaped active areas comprising a second top portion protruding from the substrate in the direction,
- wherein a first height of one of the pair of second fin-shaped active areas is higher than a second height of one of the pair of first fin-shaped active areas.
2 more elements
-25. (canceled)
An integrated circuit device comprising:
- a substrate comprising first and second fin-shaped Field Effect Transistor (FinFET) bodies protruding from the substrate, the first and second FinFET bodies comprising different respective first and second shapes in a logic region and a memory region, respectively, of the integrated circuit device.
Dependencies are inferred from the claim text.