US 2016/0260716 A1 · SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

Abstract

Disclosed is a semiconductor device. The semiconductor device may include a first pipe gate including a trench extended in a first direction. The semiconductor device may include a second pipe gate formed in the first direction and spaced apart from the surface of the trench, and configured to divide the trench into a first space and a second space. The semiconductor device may include a partition pipe gate extended in a second direction crossing the first direction, and configured to divide the first space into first areas, and divide the second space into second areas. The semiconductor device may include a first pipe channel formed inside each of the first areas, and a second pipe channel formed inside each of the second areas.

Claims20

Dependent claims

A semiconductor device, comprising:

a first pipe gate including a trench extended in a first direction;
a second pipe gate formed in the first direction and spaced apart from a surface of the trench, and configured to divide the trench into a first space and a second space;
a partition pipe gate extended in a second direction crossing the first direction, and configured to divide the first space into first areas, and divide the second space into second areas;
a first pipe channel formed inside each of the first areas;
and
a second pipe channel formed inside each of the second areas,
wherein the second pipe gate, the partition pipe gate, the first pipe channel and the second pipe channel are disposed within the trench of the first pipe gate.

4 more elements

A method of manufacturing a semiconductor device, comprising:

forming a trench extended in a first direction within a first pipe gate;
forming a trench filled structure including a first sacrificial layer along a surface of the trench, a second pipe gate along a surface of the first sacrificial layer, and a second sacrificial layer filled in a center area of the trench opened by the second pipe gate inside the trench;
and
forming a partition pipe gate disposed within the trench in a second direction crossing the first direction to divide the first sacrificial layer into first sacrificial patterns and to divide the second sacrificial layer into second sacrificial patterns.

1 more element

Dependencies are inferred from the claim text.

Semiconductor device and method of manufacturing the same

Life of this patent

Semiconductor device and method of manufacturing the same

Life of this patent

Abstract

Claims20