Integrated circuit devices including fin active areas with different shapes

An integrated circuit device comprising:

• a substrate comprising a first area and a second area;
• at least one first fin-shaped active area in the first area and comprising a first top portion protruding from the substrate in a first direction;
• and
• a second fin-shaped active area in the second area and comprising a second top portion protruding from the substrate in the first direction and having a shape different from that of the first top portion,
• wherein the first top portion comprises:
• a first lower section active area comprising a first inclined side wall extending at a first inclination angle with respect to the first direction;
• a first middle section active area on the first lower section active area in the first direction and comprising a second inclined side wall extending at a second inclination angle with respect to the first direction, wherein the second inclination angle is less than the first inclination angle;
• a first upper section active area on the first middle section active area in the first direction and comprising a third inclined side wall extending at a third inclination angle with respect to the first direction, wherein the third inclination angle is greater than the second inclination angle, and
• a first tip active area on the first upper section active area in the first direction and comprising a rounded upper surface.

An integrated circuit device comprising:

• a substrate comprising a first area and a second area of the device;
• a dummy gate structure including a fin separation insulating film thereon in the first area;
• a first fin-shaped active structure in the first area proximate to the fin separation insulating film, wherein the first fin-shaped active structure includes a first side wall profile;
• and
• a second fin-shaped active structure in the second area relatively remote from the fin separation insulating film and the first fin-shaped active structure, wherein the second fin-shaped active structure includes a second side wall profile that is different than the first side wall profile.