Ferroelectric finfet

A method of forming a semiconductor device, the method comprising:

• forming a fin over a semiconductor substrate, said fin comprising a semiconductor material;
• forming a ferroelectric high-k material over said fin;
• forming a cap layer on said ferroelectric high-k material;
• anisotropically etching said ferroelectric high-k material to remove said ferroelectric high-k material from an upper surface of said fin and expose said semiconductor material at said upper surface of said fin;
• depositing a non-ferroelectric high-k material over said etched ferroelectric high-k material and over said exposed semiconductor material at said upper surface of said fin;
• and
• activating a ferroelectric phase of said ferroelectric high-k material in the presence of said cap layer.

A method of forming a semiconductor device, the method comprising:

• forming a fin over a semiconductor substrate, said fin having an upper surface and sidewalls;
• forming a ferroelectric high-k material on said upper surface and said sidewalls of said fin;
• performing a reactive ion etching process on said ferroelectric high-k material so as to thereby expose a semiconductor material at said upper surface of said fin while leaving said ferroelectric high-k material positioned on said sidewalls of said fin;
• forming a TiN cap layer on and in contact with said ferroelectric high-k material positioned on said sidewalls of said fin;
• and
• after forming said TiN cap layer, depositing a non-ferroelectric high-k material around and above said fin and on and in contact with said TiN cap layer, said deposited non-ferroelectric high-k material covering said exposed semiconductor material at said upper surface of said fin and said ferroelectric high-k material positioned on said sidewalls of said fin.

A method of forming a semiconductor device, the method comprising:

• forming a fin over a semiconductor substrate, said fin having an upper surface and sidewalls;
• forming a ferroelectric high-k material comprising hafnium oxide on said upper surface and said sidewalls of said fin;
• performing a reactive ion etching process on said ferroelectric high-k material so as to thereby remove said ferroelectric high-k material from above the entire upper surface of said fin while leaving said ferroelectric high-k material positioned on said sidewalls of said fin;
• forming a TiN cap layer on and in contact with said ferroelectric high-k material positioned on said sidewalls of said fin and on and in contact with said upper surface of said fin;
• and
• after performing said reactive ion etching process on said ferroelectric high-k material, depositing a non-ferroelectric high-k material around said fin and on and in contact with said TiN cap layer.

A method of forming a semiconductor device, the method comprising:

• forming a first fin above a first region of a semiconductor substrate;
• forming a second fin above a second region of said semiconductor substrate;
• forming a patterned masking layer that covers said second fin and exposes said first fin;
• forming a ferroelectric high-k material layer above said first region while said second fin is covered by said patterned masking layer, said ferroelectric high-k material layer completely covering sidewall and upper surfaces of said first fin;
• performing an anisotropic etching process on said ferroelectric high-k material layer while said second fin is covered by said patterned masking layer so as to form a ferroelectric high-k sidewall spacer adjacent to said sidewall surfaces of said first fin and to expose a semiconductor material at said upper surface of said fin;
• removing said patterned masking layer;
• and
• after performing said anisotropic etching process on said ferroelectric high-k material layer, depositing a non-ferroelectric high-k material layer above said first and second regions during a same deposition process, said deposited non-ferroelectric high-k material layer completely covering said second fin, said ferroelectric high-k sidewall spacer formed adjacent to said sidewall surfaces of said first fin, and said upper surface of said first fin.