Semiconductor device

A semiconductor device, comprising:

• a semiconductor substrate;
• a first main electrode and a second main electrode which are in contact with a front surface of the semiconductor substrate;
• a rear electrode being in contact with a rear surface of the semiconductor substrate;
• a first capacitor electrode located on the front surface;
• a first insulating film located on the first capacitor electrode;
• a second capacitor electrode located on the first insulating film,
• wherein
• the first main electrode and the second main electrode are in contact with the front surface in ranges different from each other,
• a first insulated gate type switching element is provided in a portion of the semiconductor substrate located between the first main electrode and the rear electrode,
• a second insulated gate type switching element is provided in a portion of the semiconductor substrate located between the second main electrode and the rear electrode,
• an area of the first insulated gate type switching element at the front surface is larger than an area of the second insulated gate type switching element at the front surface,
• one of the first main electrode and the second main electrode is electrically connected to the first capacitor electrode, and
• the other of the first main electrode and the second main electrode is electrically connected to the second capacitor electrode.