Mom capacitor circuit and semiconductor device thereof

A semiconductor device, comprising:

• a MOM capacitor circuit, comprising:
• a plurality of MOM (Metal-Oxide-Metal) capacitors respectively formed by a plurality of pairs of metal electrodes facing each other through an insulating film on a substrate, wherein the MOM capacitor circuit is formed by at least one capacitor element in a manner that each of the pairs of the metal electrodes of the plurality of the MOM capacitors is connected to a first terminal and a second terminal through a connecting conductor;
• one or more switch element, connected to the plurality of metal electrodes and at least one of the first terminal and the second terminal;
• and
• an adjustment capacitance portion with a variable capacitance, wherein the adjustment capacitance portion has a plurality of first metal electrodes, and at least one part of the plurality of first metal electrode is connected to either the first terminal or the second terminal through each of the switch elements,
• wherein a capacitance of the MOM capacitor circuit is adjusted by turning on or off the switch element, and
• wherein the plurality of metal electrodes is arranged in a grid shape in a cross section of multiple layers on the substrate.