Method of Manufacturing Semiconductor Devices by Bonding a Semiconductor Disk on a Base Substrate, Composite Wafer and Semiconductor Device

A composite wafer, comprising:

• a base substrate;
• a first semiconductor layer from a first semiconductor material with a horizontal extension smaller than a horizontal extension of the base substrate, wherein a bonding layer is sandwiched between the base substrate and the first semiconductor layer;
• and
• a second semiconductor layer from a second, different semiconductor material on a side of the first semiconductor layer opposite to the base substrate.

A semiconductor device, comprising:

• a first semiconductor section from a first semiconductor material and comprising a first electronic element;
• a second semiconductor section from a second semiconductor material and comprising a second electronic element;
• and
• an intermediate section sandwiched between the first and second semiconductor sections, the intermediate section comprising a main portion of a third semiconductor material and a bonding structure based on a ceramic and sandwiched between the main portion and the first semiconductor section.