Method for manufacturing semiconductor device

A method for manufacturing a semiconductor device, comprising the steps of:

• (a) mounting a second substrate over a first substrate with the second substrate including an upper surface where a plurality of electrodes are formed and a lower surface on the opposite side of the upper surface;
• (b) after the step (a), baking the first substrate;
• (c) after the step (b), plasma-cleaning the upper surface of the second substrate;
• (d) after the step (c), disposing an insulative adhesive over the upper surface of the second substrate;
• (e) after the step (d), mounting a semiconductor chip over the upper surface of the second substrate through the insulative adhesive;
• and
• (f) after the step (e), heating the second substrate mounted with the semiconductor chip and the insulative adhesive by reflow, and electrically coupling each of the electrodes of the second substrate and each of a plurality of electrode pads of the semiconductor chip with each other through a plurality of bump electrodes,
• wherein in the step (f), each of the electrodes and each of the electrode pads are electrically coupled with each other through the bump electrodes in a state the insulative adhesive is disposed around each of the bump electrodes.