Semiconductor integrated circuit device and method of manufacturing the same

A method of manufacturing a semiconductor integrated circuit device comprising a fuse element, the method comprising:

• forming an insulating film on a semiconductor substrate;
• layering on the insulating film a first metal film and a first high-melting point metal film in the order stated;
• etching the first metal film and the first high-melting point metal film to form, in a fuse element region, two conductors in which the first high-melting point metal film is placed on top of the first metal film and which are spaced apart from each other, and to form a bonding pad in a bonding pad region;
• forming an amorphous silicon layer by deposition on the two conductors, the bonding pad, and the insulating film;
• forming, in the fuse element region, a fuse element from the amorphous silicon layer, which is formed in a region above the insulating film where the two conductors are spaced apart from each other, and is configured to cover a top surface of the first high-melting point metal film and side surfaces of the two conductors;
• removing the amorphous silicon layer and the first high-melting point metal film from the bonding pad region;
• forming, by deposition, over the semiconductor substrate that comprises the fuse element, a protective film in which a silicon oxide film constitutes a lower layer and a silicon nitride film constitutes an upper layer;
• and
• removing the protective film from above the bonding pad.

A method of manufacturing a semiconductor integrated circuit device that comprises a fuse element, comprising:

• forming an insulating film on a semiconductor substrate;
• layering on the insulating film a first metal film and a first high-melting point metal film in the order stated;
• etching the first metal film and the first high-melting point metal film to form, in a fuse element region, two conductors in which the first high-melting point metal film is placed on top of the first metal film and which are spaced apart from each other;
• forming an amorphous silicon layer by deposition on the two conductors and the insulating film;
• forming, in the fuse element region, a fuse element from the amorphous silicon layer, which is formed in a region above the insulating film where the two conductors are spaced apart from each other, and is configured to cover a top surface of the first high-melting point metal film and side surfaces of the two conductors;
• forming an interlayer insulating film above the first metal film;
• forming a second metal film above the interlayer insulating film;
• etching the second metal film to form a bonding pad in a bonding pad region;
• forming, by deposition, over the semiconductor substrate that comprises the fuse element, a protective film in which a silicon oxide film constitutes a lower layer and a silicon nitride film constitutes an upper layer;
• and
• removing the protective film from above the bonding pad.