Semiconductor Devices Including Conductive Features with Capping Layers and Methods of Forming the Same

A method of manufacturing a semiconductor device, the method comprising:

• forming an insulating material layer over a workpiece, the insulating material layer comprising a silicon carbide (SiC)-rich material comprising about 13% or greater of carbon (C);
• patterning the insulating material layer;
• forming a conductive feature in the insulating material layer;
• and
• forming a capping layer on a top surface of the conductive feature, wherein forming the capping layer comprises forming a material selected from the group consisting essentially of Co, Rh, Ir, Fe, Ni, and combinations thereof, at least a portion of the capping layer extending below a top surface of the insulating material layer, a top surface of the capping layer extending above a topmost top surface of the insulating material layer.

A method of forming a conductive feature of a semiconductor device, the method comprising:

• forming a first etch stop layer over a workpiece;
• forming a first insulating material layer over the first etch stop layer;
• forming a second insulating material layer over the first insulating material layer, the second insulating material layer comprising a silicon carbide (SiC)-rich material comprising about 13% or greater of carbon (C);
• patterning the first insulating material layer and the second insulating material layer with a pattern for a conductive feature;
• forming a liner over the patterned first insulating material layer and the second insulating material layer;
• forming a conductive material over the liner;
• performing a chemical mechanical polish (CMP) process, removing the conductive material and the liner from over a top surface of the second insulating material layer and forming a conductive feature, the conductive feature comprising the conductive material and the liner left remaining in the patterned first insulating material layer and the second insulating material layer;
• forming a capping layer on a top surface of the conductive feature, wherein forming the capping layer comprises forming a material selected from the group consisting essentially of Co, Rh, Ir, Fe, Ni, and combinations thereof;
• and
• forming a second etch stop layer over the capping layer and the second insulating material layer, the capping layer having a top surface extending partially into the second etch stop layer, the capping layer having a bottom surface extending below a top surface of the second insulating material layer.