Source Down Semiconductor Devices and Methods of Formation Thereof

A semiconductor device comprising:

• a chip comprising
• a diced semiconductor substrate,
• a titanium tungsten layer covering all of a major surface of the diced semiconductor substrate,
• a copper pad disposed over and covering a portion of the titanium tungsten layer, and
• a diced ceramic carrier material surrounding sidewalls of the copper pad.

An assembled semiconductor device comprising:

• a chip disposed over a die paddle, the chip comprising
• a diced semiconductor substrate comprising a source, a drain, and a gate, the source disposed at a first major surface of the diced semiconductor substrate and the gate and the drain disposed at a second major surface of the diced semiconductor substrate, wherein the first major surface is opposite to the second major surface,
• a barrier layer covering all of the first major surface;
• a seed layer disposed over the barrier layer,
• a patterned contact pad disposed over and covering a portion of the seed layer, wherein the patterned contact pad is attached to the die paddle and the second major surface faces away from the die paddle, and
• a diced carrier material surrounding sidewalls of the patterned contact pad.