Semiconductor device and manufacturing method of semiconductor device

A method of manufacturing a semiconductor device, comprising:

• forming a mark including a reference pattern and a measuring pattern in a mark-forming area of a processing target, the reference pattern and the measuring pattern extending in a first direction, the reference pattern and the measuring pattern being separated by a predetermined distance in a second direction intersecting the first direction from each other;
• forming a resist pattern so as to cover a predetermined area in an element-forming area of the processing target, to cover all the reference pattern, and to cover the measuring pattern to expose one edge in the second direction,
• measuring first position measurement information including positions of predetermined portions of the reference pattern, the measuring pattern, and the resist pattern in the second direction in the mark-forming area;
• etching the processing target using the resist pattern as a mask;
• slimming the resist pattern through isotropic etching in a reference time defined in a recipe;
• measuring second position measurement information including positions of predetermined portions of the reference pattern, the measuring pattern, and the resist pattern in the second direction in the mark-forming area;
• calculating a calculated slimming amount of the resist pattern using the first position measurement information and the second position measurement information;
• determining whether the calculated slimming amount is within a predetermined range from a reference slimming amount acquired from the recipe;
• and
• correcting the reference time based on a period of time corresponding to a difference between the calculated slimming amount and the reference slimming amount when the calculated slimming amount is not within the predetermined range from the reference slimming amount.

A method of manufacturing a semiconductor device, comprising:

• forming a mark including a reference pattern and a measuring pattern in a mark-forming area of a processing target, the reference pattern and the measuring pattern extending in a first direction, the reference pattern and the measuring pattern being separated by a predetermined distance in a second direction intersecting the first direction from each other;
• forming a resist pattern so as to cover a predetermined area in an element-forming area of the processing target, to cover all the reference pattern, and to cover the measuring pattern to expose one edge in the second direction,
• etching the processing target using the resist pattern as a mask;
• slimming the resist pattern through isotropic etching in a reference time defined in a recipe;
• etching the processing target using the slimmed resist pattern as a mask;
• measuring sizes of flat portions of a stepped structure which is formed on a side of the measuring pattern not covered with the resist pattern after the etching, the sizes of the flat portions being sizes in the step-forming direction;
• setting the sizes of the flat portions as the calculated slimming amount;
• determining whether the calculated slimming amount is within a predetermined range from a reference slimming amount acquired from the recipe;
• and
• correcting the reference time based on a period of time corresponding to a difference between the calculated slimming amount and the reference slimming amount when the calculated slimming amount is not within the predetermined range from the reference slimming amount.