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US 2016/0260633 A1Published application
Composite Contact Plug Structure and Method of Making Same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsYu-Hung Lin, Sheng-Hsuan Lin, Chih-Wei Chang, You-Hua Chou, Chia-Lin Hsu
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Abstract
An embodiment contact plug includes a bilayer structure and a diffusion barrier layer on a sidewall and a bottom surface of the bilayer structure. The bilayer structure includes a conductive core and a conductive liner on a sidewall and a bottom surface of the conductive core. In the embodiment contact plug, the conductive liner comprises cobalt or ruthenium.
Claims20
A method for forming a contact plug, the method comprising:
- forming a dielectric layer over a substrate;
- patterning an opening in the dielectric layer, the opening exposing the substrate;
- depositing a diffusion barrier layer in the opening;
- depositing a conductive liner comprising cobalt or ruthenium over the diffusion barrier layer, wherein the conductive liner is thicker on a bottom surface of the opening than on sidewalls of the opening;
- and
- filling remaining portions of the opening with a conductive core, wherein the conductive core and the conductive liner comprise different conductive materials, and wherein the conductive liner is disposed between the conductive core and the diffusion barrier layer.
3 more elements
A method for forming a contact plug, the method comprising:
- forming a dielectric layer over a substrate;
- etching the dielectric layer to form an opening in the dielectric layer, the opening exposing the substrate;
- depositing a first conductive material on a bottom surface and sidewalls of the opening;
- depositing a diffusion barrier layer over the first conductive material;
- depositing a second conductive material over the diffusion barrier layer, the second conductive material comprising cobalt or ruthenium, a first portion of the second conductive material extending along the sidewalls of the opening having a first thickness, a second portion of the second conductive material over the bottom surface of the opening having a second thickness, the first thickness being less than the second thickness;
- and
- filling the opening with a third conductive material, the third conductive material being different from the second conductive material, the second conductive material extending along a bottom surface and sidewalls of the third conductive material.
4 more elements
A method for forming a contact plug, the method comprising:
- forming a dielectric layer over a substrate;
- removing a portion of the dielectric layer to form an opening in the dielectric layer, the opening exposing an upper portion of the substrate;
- forming a first conductive layer on a bottom surface and a sidewall of the opening, the first conductive layer comprising titanium, cobalt, nickel, or tungsten;
- forming a diffusion barrier layer over the first conductive layer, the diffusion barrier layer comprising tantalum or tantalum nitride;
- forming a second conductive layer over the diffusion barrier layer, the second conductive layer comprising cobalt or ruthenium;
- forming a third conductive layer over the second conductive layer, the third conductive layer completely filling the opening, the third conductive layer comprising tungsten, cobalt, or ruthenium, the second conductive layer and third conductive layer comprising different materials, a first portion of the second conductive layer interposed between the sidewall of the opening and a sidewall of the third conductive layer having a first thickness, a second portion of the second conductive layer interposed between the bottom surface of the opening and a bottom surface of the third conductive layer having a second thickness, the second thickness being greater than the first thickness;
- and
- after forming the third conductive layer, annealing the substrate.
5 more elements
Dependencies are inferred from the claim text.