Asymmetric high-k dielectric for reducing gate induced drain leakage

A method, comprising:

• performing a blocking process on a high-k dielectric sidewall on a source side of a gate structure;
• and
• performing an oxygen annealing process to grow an oxide region on a drain side of the gate structure, while inhibiting oxide growth on the source side of the gate structure adjacent to a source region,
• wherein the blocking process is a formation of a nitride sidewall on the high-k dielectric sidewall on a source side of a gate structure, and
• wherein the blocking process comprises damaging the nitride sidewall on the drain side of the of the gate structure.