Manufacturing method of semiconductor structure

A method for forming a semiconductor structure, comprising the following steps:

• providing at least two gate electrodes disposed on a substrate;
• forming a spacer disposed on two sides of each gate electrode;
• performing an ion implantation process on each gate electrode while making each gate electrode becomes mushroom-shaped;
• performing a dry-etching process to remove parts of the spacer, and make the profile of the gate electrodes become a tapered surface;
• performing a salicide process on each gate electrode to form a salicide region disposed on each gate electrode, wherein the width of the salicide region is larger than the width of the gate electrode;
• and
• forming a contact etching stop layer (CESL) on each gate electrode.