Word Line Look Ahead Read For Word Line To Word Line Short Detection

A method, comprising:

• performing a programming pass for memory cells connected to a selected word line, wherein the programming pass is successfully completed after a number of program loops;
• determining that the number of program loops exceeds a specified number;
• and
• in response to the determining that the number of program loops exceeds the specified number:
• determining a count of memory cells connected to an adjacent word line having a threshold voltage above a read voltage, wherein the adjacent word line is adjacent to the selected word line and after the selected word line in a programming order;
• and
• if the count exceeds a bit count limit, performing a recovery operation for the memory cells of the selected word line and preventing future programming of the adjacent word line.

An apparatus, comprising:

• a block of memory cells, the block comprising memory cells connected to a plurality of word lines, including a selected word line and an adjacent word line, adjacent to the selected word line;
• and
• a control circuit, the control circuit is configured to:
• erase the block using an erase-verify voltage;
• perform a programming pass for memory cells connected to the selected word line;
• based on a progress of the programming pass, make a determination of whether a soft short circuit exists between the selected word line and the adjacent word line, the determination, comprises an evaluation of a threshold voltage distribution of memory cells connected to the adjacent word line relative to the erase-verify voltage;
• based on the evaluation, make a conclusion of whether the soft short circuit exists;
• and
• if the conclusion is that the soft short circuit exists, take a corrective action.