Data storage device and method of driving the same

A non-volatile memory device comprising:

• a memory cell array including a plurality of memory cells;
• and
• a control circuit,
• wherein each of the plurality of memory cells comprises a channel layer, a charge trap layer disposed over the channel layer, and a control electrode disposed over the charge trap layer, the charge trap layer being shared by the plurality of memory cells in the memory cell array,
• wherein the charge trap layer comprises:
• program regions respectively disposed below the control electrodes of the plurality of memory cells;
• and
• charge spread blocking regions, each of which is disposed between two adjacent ones of the program regions and between two adjacent ones of the control electrodes, and
• wherein the control circuit is configured to control the memory cell array so that a potential barrier is generated in the charge spread blocking regions by charging the charge spread blocking regions with charges having the same polarity as that of program charges stored in the program regions.