Back to results
US 2016/0260480 A1Published application
Operation method for rram
AssigneeWinbond Electronics Corp.
InventorCHIEN-MIN WU
Life of this patent
Estimating the term…
Abstract
The present invention provides an operation method for RRAM. The operation method includes providing a reset voltage pulse to a RRAM, providing a dummy voltage pulse to the RRAM, and providing a verification voltage pulse to the RRAM. The reset current of the RRAM is read when the verification voltage pulse is provided. The voltage level of the verification voltage pulse is higher than the voltage level of the read voltage pulse for reading the RRAM.
Claims9
An operation method for a resistive random access memory (RRAM), comprising:
- providing a reset voltage pulse to the RRAM;
- providing a dummy voltage pulse to the RRAM;
- and
- providing a verification voltage pulse to the RRAM and reading a reset current of the RRAM when the verification voltage pulse is provided, wherein voltage level of the verification voltage pulse is higher than a voltage level for providing a reading voltage pulse to read the RRAM.
1 more element
An operation method for a resistive random access memory (RRAM), comprising:
- providing a reset voltage pulse to the RRAM;
- providing a verification voltage pulse to the RRAM and reading current of the RRAM when the verification voltage pulse is provided, wherein voltage level of the verification voltage pulse is higher than a voltage level for providing a reading voltage pulse to read the RRAM, and a waiting period is provided between providing the reset voltage pulse and providing the verification voltage pulse.
Dependencies are inferred from the claim text.