Variable resistive memory device and method of operating the same
AssigneeSK hynix Inc.
InventorKi Myung KYUNG
Life of this patent
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Abstract
A variable resistive memory device may include a memory region and controller. The memory region may include a plurality of unit memory cells each electrically connected between a word line and a bit line. The controller may perform a driving operation of the word line in response to a read command. The controller may perform a driving operation of a bit line to output cell data through the bit line substantially simultaneously with the driving operation of the word line. Each of the unit memory cell may include a variable resistive material.
Claims23
A variable resistive memory device comprising:
- a memory region including a plurality of unit memory cells each electrically connected between a word line and a bit line;
- and
- a controller configured to perform a driving operation of the word line in response to a read command simultaneously with a driving operation of the bit line for outputting cell data through the bit line,
- wherein each of the unit memory cells include a variable resistive material.
A method of operating a variable resistive memory device, the variable resistive memory device including a memory region and a controller, the memory region including a plurality of unit memory cells each electrically connected between a word line and a bit line and including a variable resistive material, and the controller for controlling the memory region, the method comprising:
- performing a driving operation of the word line in response to a read command by the controller,
- wherein the driving operation of the word line is performed simultaneously with a driving operation of the bit line for outputting cell data through the bit line.
Dependencies are inferred from the claim text.