Magnetic storage device

A magnetic storage device comprising:

• a first magnetoresistive effect element comprising a first magnetic layer and a second magnetic layer which sandwich a first nonmagnetic layer, and a third magnetic layer which sandwiches the second magnetic layer with the first nonmagnetic layer, a magnetization orientation of the second magnetic layer being antiparallel to a magnetization orientation of the third magnetic layer;
• a second magnetoresistive effect element comprising a fourth magnetic layer and a fifth magnetic layer which sandwich a second nonmagnetic layer, and a sixth magnetic layer which sandwiches the fifth magnetic layer with the second nonmagnetic layer, the sixth magnetic layer having a shape different from a shape of the third magnetic layer, and a magnetization orientation of the fifth magnetic layer being parallel to a magnetization orientation of the sixth magnetic layer;
• and
• an amplifier having a first input coupled to the first magnetoresistive effect element and a second input coupled to the second magnetoresistive effect element, and amplifying a difference between a potential of the first input and a potential of the second input.

A magnetic storage device comprising:

• a first magnetoresistive effect element;
• a reference circuit comprising a second magnetoresistive effect element;
• an amplifier having a first input coupled to the first magnetoresistive element and a second input coupled to the reference circuit, and amplifying a difference between a potential of the first input and a potential of the second input;
• a first circuit which conducts a first write current through the first magnetoresistive effect element;
• and
• a second circuit which conducts a second write current larger than the first write current through the second magnetoresistive effect element,