Memory system, method for controlling magnetic memory, and device for controlling magnetic memory

A method of controlling a magnetic memory with a plurality of magnetic nanowires, the method comprising:

• shifting domain walls in the magnetic nanowires;
• reading data in parallel from the magnetic nanowires for each shifting;
• storing the data read in parallel;
• determining a misalignment when the stored data corresponding to a first magnetic nanowire of the magnetic nanowires are delayed or advanced as compared to the stored data corresponding to a second magnetic nanowire of magnetic nanowires, and correcting the stored data based on the determined misalignment.

A control device configured to control a magnetic memory including a plurality of magnetic nanowires and a read unit that reads data from the magnetic nanowires,

• the control device comprising:
• a shift control unit configured to shift domain walls in the magnetic nanowires;
• and
• a read control unit configured to cause the read unit to read data from the magnetic nanowires in parallel, store two or more of the data read in parallel, determine a misalignment of the data when the data corresponding to a first magnetic nanowire of the magnetic nanowires are delayed or advanced as compared to the data corresponding to, a second magnetic nanowire of the magnetic nanowires, and correct the stored data based on the determined misalignment.