Memory device and storage apparatus
AssigneeHitachi, Ltd.
InventorsKenta NINOSE, Takuji ITOU, Fumio YOSHIOKA, Takashi TSUNEHIRO, Go UEHARA, Shigeo HOMMA
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AssigneeHitachi, Ltd.
InventorsKenta NINOSE, Takuji ITOU, Fumio YOSHIOKA, Takashi TSUNEHIRO, Go UEHARA, Shigeo HOMMA
Estimating the term…
A failure region is specified when a failure occurs in a non-volatile semiconductor memory. When a device controller reads data stored in a specific page in a plurality of non-volatile semiconductor memories to detect an uncorrectable error (UE) of the data stored in the specific page, the device controller executes a diagnosis process including specifying a specific storage circuit that is a storage circuit including the specific page, reading data stored in a part of blocks of the specific storage circuit, and specifying, on the basis of a result of reading data stored in the block, a failure region in the specific storage circuit.
A memory device comprising:
A storage apparatus comprising:
Dependencies are inferred from the claim text.