Photoresist and Method of Formation and Use
AssigneeTaiwan Semiconductor Manufaturing Company, Ltd.
InventorsKeng-Chu Lin, Joung-Wei Liou, Cheng-Han Wu, Ya Hui Chang
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Abstract
A system and method for depositing a photoresist and utilizing the photoresist are provided. In an embodiment a deposition chamber is utilized along with a first precursor material comprising carbon-carbon double bonds and a second precursor material comprising repeating units to deposit the photoresist onto a substrate. The first precursor material is turned into a plasma in a remote plasma chamber prior to being introduced into the deposition chamber. The resulting photoresist comprises a carbon backbone with carbon-carbon double bonds.
Claims20
A photoresist comprising:
- a carbon backbone, wherein the carbon backbone comprises at least one linear section with a carbon-carbon double bond;
- and
- one or more monomers attached to the carbon backbone, wherein a ratio of the carbon-carbon double bonds to carbon-carbon single bonds on the carbon backbone is less than about 40%.
A photoresist comprising:
- a carbon backbone, wherein the carbon backbone comprises at least one linear section with a carbon-carbon double bond;
- and
- one or more monomers attached to the carbon backbone, wherein the photoresist has a structure of:
- where R1 represents a first one of the one or more monomers and R2 represents a second one of the one or more monomers different than the first one of the one or more monomers.
A photoresist comprising:
- a carbon backbone comprising at least one linear section with a carbon-carbon double bond;
- one or more monomers attached to the carbon backbone;
- and
- a polymer bound photoacid generator.
Dependencies are inferred from the claim text.