Display apparatus and apparatus for and method of manufacturing the display apparatus

A display apparatus comprising:

• a substrate;
• a display unit on the substrate;
• and
• a thin film encapsulation layer on the display unit,
• wherein the thin film encapsulation layer comprises an inorganic layer, and
• the inorganic layer comprises:
• a first sub-inorganic layer comprising one of an aluminum oxide (Al2O3), a zinc oxide (ZnO), a zirconium oxide (ZrO2), and a hafnium oxide (HfO2);
• and
• a second sub-inorganic layer comprising another one of Al2O3, ZnO, ZrO2, and HfO2.

An apparatus for manufacturing a display apparatus, the apparatus comprising:

• a chamber;
• a shower head in the chamber and configured to spray processing gases;
• a gas supplier configured to supply the processing gases to the shower head;
• and
• a substrate supporter installed in the chamber and configured to support a substrate,
• wherein the shower head is configured to form an inorganic layer comprising a compound oxide comprising at least two of aluminum (Al), zinc (Zn), zirconium (Zr), and hafnium (Hf).

A method of manufacturing a display apparatus, method comprising:

• loading a substrate, on which a display unit is formed, into a chamber;
• and
• forming an inorganic layer on the display unit through atomic layer deposition (ALD) by receiving a processing gas from an external device,
• wherein the inorganic layer is formed of a compound oxide comprising at least two of aluminum (Al), zinc (Zn), zirconium (Zr), and hafnium (Hf).

A method of manufacturing a display apparatus, the method comprising:

• loading a substrate, on which a display unit is formed, into a chamber;
• and
• forming an inorganic layer on the display unit through atomic layer deposition (ALD) by receiving a processing gas from an external device,
• wherein the forming comprises:
• forming, on the display unit, a first sub-inorganic layer comprising one selected from the group consisting of an aluminum oxide (Al2O3), a zinc oxide (ZnO), a zirconium oxide (ZrO2), and a hafnium oxide (HfO2);
• and
• stacking, on the first sub-inorganic layer, a second sub-inorganic layer comprising another one selected from the group consisting of Al2O3, ZnO, ZrO2, and HfO2.