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US 2016/0257880 A1Published application
Etchant composition for titanium nitride layer and method for forming metal wire using the same
AssigneeDongwoo Fine-Chem Co., Ltd.
InventorsHyung-Pyo Hong, Jin-Seok Yang, Hun-Pyo Hong, Sang-Tae Kim, Kyong-Ho Lee
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Abstract
The present invention provides an etchant composition for a TiN layer including (A) at least one compound selected from sulfuric acid and alkyl sulfonic acid in 75% by weight to 95% by weight, (B) a peroxide in 0.3% by weight to 10% by weight, (C) an inorganic ammonium salt in 0.0001% by weight to 3% by weight, and (D) water in a residual quantity, and a method for forming a metal wire using the etchant composition.
Claims10
An etchant composition for a TiN layer comprising:
- (A) at least one compound selected from sulfuric acid and alkyl sulfonic acid in 75% by weight to 95% by weight;
- (B) a peroxide in 0.3% by weight to 10% by weight;
- (C) an inorganic ammonium salt in 0.0001% by weight to 3% by weight;
- and
- (D) water in a residual quantity.
2 more elements
Dependencies are inferred from the claim text.