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US 2016/0254809 A1Published application
Semiconductor chip, semiconductor device and battery pack
AssigneeRenesas Electronics Corporation
InventorsKeita MOCHIZUKI, Kensuke NAKASHIMA, Takahiro KORENARI, Kouji NAKAJIMA
Life of this patent
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Abstract
To provide a semiconductor product high in versatility. A common drain pad is formed over the surface of a semiconductor chip together with source pads and gate pads of discharging and charging power transistors. Thus, when the semiconductor chip is face-down mounted over a wiring board, not only the source pads and gate pads of the discharging and charging power transistors, but also the common drain pad is electrically coupled to wirings of the wiring board.
Claims20
A semiconductor chip comprising:
- a first power transistor;
- a second power transistor reversely coupled in series with the first power transistor;
- wherein the semiconductor chip is formed at a surface thereof with:
- a first source pad which functions as a first source of the first power transistor,
- a first gate pad which functions as a first gate of the first power transistor,
- a second source pad which functions as a second source of the second power transistor,
- a second gate pad which functions as a second gate of the second power transistor, and
- a common drain pad which functions as a first drain of the first power transistor and functions even as a second drain of the second power transistor.
5 more elements
A semiconductor device comprising:
- a control unit which controls charging/discharging of a secondary battery;
- a bidirectional coupling unit which is electrically coupled to the control unit and through which a charging/discharging current flows;
- and
- a protection diode coupled between the control unit and the bidirectional coupling unit,
- wherein the bidirectional coupling unit includes:
- a discharging power transistor,
- a charging power transistor reversely coupled in series with the discharging power transistor, and
- a common drain pad which functions as a drain of the discharging power transistor and functions as a drain of the charging power transistor,
- wherein an anode of the protection diode is electrically coupled to the common drain pad, and
- wherein a cathode of the protection diode is electrically coupled to a power supply terminal of the control unit.
7 more elements
A battery pack comprising:
- a secondary battery capable of charging and discharging;
- and
- a semiconductor device which controls the secondary battery;
- wherein the semiconductor device includes:
- a control unit which controls the charging/discharging of the secondary battery,
- a bidirectional coupling unit which is electrically coupled to the control unit and through which a charging/discharging current flows, and
- a protection diode coupled between the control unit and the bidirectional coupling unit,
- wherein the bidirectional coupling unit includes:
- a discharging power transistor,
- a charging power transistor reversely coupled in series with the discharging power transistor, and
- a common drain pad which functions as a drain of the discharging power transistor and functions as a drain of the charging power transistor,
- wherein an anode of the protection diode is electrically coupled to the common drain pad,
- wherein a cathode of the protection diode is electrically coupled to a power supply terminal of the control unit,
- wherein the semiconductor device further includes:
- a wiring board having a main surface;
- a control chip mounted over the main surface of the wiring board and formed with the control unit;
- a semiconductor chip mounted over the main surface of the wiring board and formed with the bidirectional coupling unit;
- and
- a diode chip mounted over the main surface of the wiring board and formed with the protection diode,
- wherein the semiconductor chip is formed at a surface thereof with:
- a first source pad which functions as a first source of the discharging power transistor,
- a first gate pad which functions as a first gate of the discharging power transistor,
- a second source pad which functions as a second source of the charging power transistor,
- a second gate pad which functions as a second gate of the charging power transistor, and
- the common drain pad, and
- wherein the semiconductor chip is mounted over the wiring board in a state in which the surface of the semiconductor chip is opposed to the main surface of the wiring board.
23 more elements
A semiconductor chip comprising:
- a first power transistor;
- and
- a second power transistor,
- wherein a first drain of the first power transistor and a second drain of the second power transistor are electrically coupled, and
- wherein the semiconductor chip is formed at a surface thereof with:
- a first source pad which functions as a first source of the first power transistor,
- a first gate pad which functions as a first gate of the first power transistor,
- a second source pad which functions as a second source of the second power transistor,
- a second gate pad which functions as a second gate of the second power transistor, and
- a common drain pad which functions as the first drain of the first power transistor and functions even as the second drain of the second power transistor.
7 more elements
A semiconductor device comprising:
- a semiconductor chip including:
- a first power transistor;
- and
- a second power transistor,
- wherein a first drain of the first power transistor and a second drain of the second power transistor are electrically coupled,
- wherein the semiconductor chip is formed at a surface thereof with:
- a first source pad which functions as a first source of the first power transistor,
- a first gate pad which functions as a first gate of the first power transistor,
- a second source pad which functions as a second source of the second power transistor,
- a second gate pad which functions as a second gate of the second power transistor, and
- a common drain pad which functions as the first drain of the first power transistor and functions even as the second drain of the second power transistor, and
- wherein the semiconductor device is formed with a circuit including the first power transistor and the second power transistor as components.
9 more elements
Dependencies are inferred from the claim text.