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US 2016/0254472 A1Published application
Perovskite thin films having large crystalline grains
AssigneeNanyang Technological University
InventorsNing WANG, Hilmi Volkan DEMIR, Xiaowei SUN
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Abstract
The invention relates generally to perovskite materials, and in particular, to perovskite thin films having large crystalline grains. Methods of forming the perovskite thin films are disclosed herein. The perovskite thin films find particular use in photovoltaic applications.
Claims11
A method for forming a perovskite thin film having an ABX3 crystalline structure, wherein the crystalline structure comprises an average grain size of more than 1 micron, the method comprising:
- forming via vacuum thermal evaporation a layer of a metal (II) halide (BX2) on a substrate;
- depositing via spin coating a solution of an organic halide or a metal (I) halide (AX) on the BX2 layer;
- and
- annealing the BX2 and AX layers to form the perovskite thin film, wherein A is CH3NH3+, CH3N2H2+, or Cs+, B is Pb2+, Sn2+, and X is Cl−, Br− or I−.
1 more element
A method for forming a planar heterojunction perovskite solar cell, the method comprising:
- depositing a layer of poly(3,4-ethylene dioxythiophene)-poly(styrene sulfonate) (PEDOT:PSS) on a glass substrate pre-coated with indium-tin oxide (ITO);
- depositing a layer of poly(9,9-dioctylfluorene-co-N-(4-(3-methylpropyl))diphenylamine) (TFB) on the layer of PEDOT:PSS;
- forming via vacuum thermal evaporation a layer of a metal (II) halide (BX2) on the layer of TFB;
- depositing via spin coating a solution of an organic halide or a metal (I) halide (AX) on the metal (II) halide layer;
- annealing the BX2 and AX layers to form a perovskite thin film, wherein A is CH3NH3+, CH3N2H2+, or Cs+, B is Pb2+, Sn2+, and X is Cl−, Br− or I−;
- depositing a layer of [6,6]-phenyl-C61-butyric acid methyl ester (PCBM) on the perovskite thin film;
- and
- forming a top metal electrode on the PCBM layer to form the solar cell.
5 more elements
Dependencies are inferred from the claim text.