Nonlinear memristor devices with three-layer selectors

A nonlinear memristor device, comprising:

• a three-layer selector coupled with a first electrode,
• wherein the three-layer selector is based on a throe-layer structure selected from the group consisting of XN—XO—XN;
• XN—YO—ZN;
• XN—YO—XN;
• XO—XN—XO;
• XO—YN—XO;
• XO—YN—ZO;
• XO—YO—XO;
• XP—YO—ZO;
• XN—YN—ZN;
• and XN—YN—XN,
• wherein X represents a compound-forming metal different from Y and Z, and
• wherein a first outer layer of the three-layer selector forms a first interface with the first electrode:
• a memristor, comprising an electrically conducting layer and an electrically insulating layer, coupled with the three-layer selector, wherein an electrically conducting layer of the memristor forms a second interface with a second outer layer of the three-layer selector;
• and
• a second electrode coupled with the memristor, wherein the second electrode forms a third interface with an electrically insulating layer of the memristor.

A method of manufacturing a nonlinear memristor device comprising coupling in electrical series:

• a memristor comprising at least one electrically conducting layer and at least one electrically insulating layer;
• and
• a three-layer selector comprising a three-layer structure selected from the group consisting of XN—XO—XN;
• XN—YO—ZN;
• XN—YO—XN;
• XO—XN—XO;
• XO—YN—XO;
• XO—YN—ZO;
• XO—YO—XO;
• XO—YO—ZO;
• XN—YN—ZN;
• and XN—YN—XN,
• wherein X represents a compound-forming metal different from Y and Z.