Methods of Forming and Using Materials Containing Silicon and Nitrogen
AssigneeMicron Technology, Inc.
InventorEugene P. Marsh
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Abstract
Some embodiments include methods utilizing atomic layer deposition to form material containing silicon and nitrogen (e.g., silicon nitride). The atomic layer deposition uses Sil4 as one precursor and uses a nitrogen-containing material as another precursor. Some embodiments include methods of forming a structure in which a chalcogenide region is formed over a semiconductor substrate; and in which Sil4 is used as a precursor during formation of silicon nitride material directly against a surface of the chalcogenide region.
Claims20
A method of forming material, comprising utilization of atomic layer deposition with Sil4 as one precursor and a nitrogen-containing material as another precursor.
A method of forming material, comprising:
- forming a chalcogenide region over a substrate;
- and
- performing atomic layer deposition onto the chalcogenide region at a temperature of less than or equal to about 250° C. utilizing Sil4 as one precursor and a nitrogen-containing material as another precursor.
A method of forming material, comprising:
- forming a chalcogenide region over a substrate;
- and
- depositing a material onto the chalcogenide region at a temperature of less than or equal to about 250° C. utilizing Sil4 as one precursor and a nitrogen-containing material as another precursor.
Dependencies are inferred from the claim text.