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US 2016/0254445 A1Published application
Magnetic memory with high thermal budget
AssigneeGlobalfoundries Singapore Pte. Ltd.
InventorsTaiebeh TAHMASEBI, Chim Seng SEET
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Abstract
A magnetic memory having a base layer with a wetting layer and seed layer is disclosed. The wetting layer and seed layer promotes FCC structure along the (111) orientation to improve PMA. A surface smoother, such as a surfactant layer, is provided between the wetting and seed layers. This enhances the smoothness of the seed layer, resulting in smoother interface in the MTJ stack, which leads to improved thermal endurance.
Claims20
A method of forming a storage unit of a memory cell comprising:
- forming a bottom electrode;
- forming a fixed layer disposed over the bottom electrode, wherein the fixed layer comprises a hard layer disposed over a base layer, the base layer promotes face-centered cubic (FCC) structure along (111) orientation to increase perpendicular magnetic anisotropy, the base layer comprises
- a wetting layer, wherein the wetting layer comprises Mg, the wetting layer promotes FCC structure along (111) orientation, and
- a seed layer comprising n bilayers which promote FCC structure along (111) orientation;
- forming at least a first tunneling barrier layer over the hard layer;
- forming a storage layer over the first tunneling barrier layer;
- and
- forming a top electrode over the storage layer.
5 more elements
A method of forming a memory cell comprising:
- forming a select unit on a substrate, wherein the select unit comprises a transistor having
- a first source/drain (S/D) region,
- a second S/D region, and
- a gate between the first and second S/D regions;
- forming a dielectric layer on the substrate covering the select unit, wherein the dielectric layer includes a storage pad coupled to the first S/D region;
- forming a storage unit on the storage pad, wherein the storage unit comprises
- forming a bottom electrode,
- forming a fixed layer disposed over the bottom electrode, wherein the fixed layer comprises a hard layer disposed over a base layer, the base layer promotes face-centered cubic (FCC) structure along (111) orientation to increase perpendicular magnetic anisotropy, the base layer comprises
- a wetting layer, wherein the wetting layer comprises Mg, the wetting layer promotes FCC structure along (111) orientation, and
- a seed layer comprising n bilayers which promote FCC structure along (111) orientation;
- forming at least a first tunneling barrier layer over the hard layer,
- forming a storage layer over the first tunneling barrier layer, and
- forming a top electrode over the storage layer;
- and
- forming a bitline coupled to the top electrode layer.
12 more elements
A storage unit of a memory cell comprising:
- a bottom electrode;
- a fixed layer disposed over the bottom electrode, wherein the fixed layer comprises a hard layer disposed over a base layer, the base layer promotes face-centered cubic (FCC) structure along (111) orientation to increase perpendicular magnetic anisotropy, the base layer comprises
- a wetting layer, wherein the wetting layer comprises Mg, the wetting layer promotes FCC structure along (111) orientation, and
- a seed layer comprising n bilayers which promote FCC structure along (111) orientation;
- at least a first tunneling barrier layer disposed over the hard layer;
- a storage layer disposed over the first tunneling barrier layer;
- and
- a top electrode disposed over the storage layer.
5 more elements
Dependencies are inferred from the claim text.