Light emitting device and fabricating method thereof

A fabricating method of a light emitting device, comprising:

• providing a circuit board comprising a plurality of electrode pads;
• providing a light emitting unit, wherein the light emitting unit comprises a semiconductor epitaxial structure layer and a first electrode and a second electrode disposed on the semiconductor epitaxial structure layer;
• attaching an anisotropic conductive layer to the circuit board or the light emitting unit;
• aligning the first electrode and the second electrode to the electrode pads;
• and
• performing a process on the anisotropic conductive layer, such that the first electrode and the second electrode are electrically connected with the electrode pads.

A light emitting device, comprising:

• a circuit board;
• a light emitting unit, comprising:
• a substrate;
• a semiconductor epitaxial structure layer, disposed on the substrate;
• and
• a first electrode and a second electrode, respectively disposed on the same side of the semiconductor epitaxial structure layer;
• a light transmissive layer, wherein the light emitting unit is disposed on the light transmissive layer;
• an encapsulant, located between the light transmissive layer and the light emitting unit, encapsulating the light emitting unit, and exposing at least a part of the first electrode and a part of the second electrode, wherein the first electrode and the second electrode respectively extend outward from the semiconductor epitaxial structure layer and respectively cover a part of an upper surface of the encapsulant;
• and
• an anisotropic conductive layer, wherein the first electrode and the second electrode are electrically connected with the circuit board through the anisotropic conductive layer.