Substrate having annealed aluminum nitride layer formed thereon and method for manufacturing the same
AssigneesTohoku University, Mie University
InventorsHiroyuki FUKUYAMA, Hideto MIYAKE
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Abstract
A substrate having an annealed AlN layer includes a substrate made of a material selected from among a group including sapphire, silicon carbide (SiC), and aluminum nitride (AlN), and an aluminum nitride (AlN) layer formed on the substrate and having a thickness of 100 nm or greater. The aluminum nitride layer is annealed at a prescribed annealing temperature and in a nitrogen/carbon monoxide (N2/CO) mixed gas atmosphere, and the nitrogen/carbon monoxide (N2/CO) mixed gas has a mixture ratio of N2 gas/CO gas in a range of 0.95/0.05 to 0.4/0.6.
Claims20
A substrate having an annealed AlN layer, comprising:
- a substrate made of a material selected from among a group including sapphire, silicon carbide (SiC), and aluminum nitride (AlN);
- and
- an aluminum nitride (AlN) layer formed on the substrate and having a thickness of 100 nm or greater,
- wherein the aluminum nitride layer is annealed at a prescribed annealing temperature and in a nitrogen/carbon monoxide (N2/CO) mixed gas atmosphere, and
- wherein the nitrogen/carbon monoxide (N2/CO) mixed gas has a mixture ratio of N2 gas/CO gas in a range of 0.95/0.05 to 0.4/0.6.
A substrate having an annealed AlN layer, comprising:
- a substrate made of a material selected from among a group including sapphire, silicon carbide (SiC), and aluminum nitride (AlN);
- a first layer formed on the substrate;
- and
- a second layer formed on the first layer,
- wherein the first layer is 100 nm or greater in thickness, is an annealed aluminum nitride (AlN) layer, and functions as a buffer layer, and
- wherein a concentration of carbon (C) contained in the first layer is greater than a concentration of carbon (C) contained in a region of the second layer excluding a vicinity of a surface of the second layer.
A method for manufacturing a substrate having an annealed AlN layer, comprising:
- forming an aluminum nitride (AlN) layer to a thickness of 100 nm or greater on a substrate;
- and
- annealing the aluminum nitride (AlN) layer at a prescribed annealing temperature and in a nitrogen/carbon monoxide (N2/CO) mixed gas atmosphere,
- wherein, in the step of annealing, the annealing is performed in the nitrogen/carbon monoxide (N2/CO) mixed gas atmosphere, and the mixed gas has a mixture ratio of N2 gas/CO gas within a range of 0.95/0.05 to 0.4/0.6.
Dependencies are inferred from the claim text.