Microstructure enhanced absorption photosensitive devices
AssigneeW&Wsens Devices, Inc.
InventorsShih-Yuan WANG, Shih-Ping WANG
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Abstract
Techniques for enhancing the absorption of photons in semiconductors with the use of microstructures are described. The microstructures, such as pillars and/or holes, effectively increase the effective absorption length resulting in a greater absorption of the photons. Using microstructures for absorption enhancement for silicon photodiodes and silicon avalanche photodiodes can result in bandwidths in excess of 10 Gb/s at photons with wavelengths of 850 nm, and with quantum efficiencies of approximately 90% or more.
Claims69
A photodetector with microstructure-enhanced photoabsorption comprising:
- a cathode region;
- an anode region;
- reverse biasing circuitry configured to apply a voltage between said cathode and anode regions such that said cathode region is driven to a more positive voltage than said anode region;
- and
- a microstructure-enhanced photon absorbing semiconductor region operatively associated with the cathode and anode regions and configured to absorb photons from a source signal, said absorbing region including a plurality of microstructures configured to increase absorption of photons at a range of wavelengths that includes a wavelength of said source signal relative to an absorbing region that is not intentionally microstructure-enhanced.
A photovoltaic device comprising a semiconductor material having a plurality of voids buried therein, the semiconductor material configured to convert solar radiation into direct current electricity.
A glass material comprising a glass having a plurality of buried voids dimensioned between 0.01 microns to 1000 microns.
A microwave transmission line structure comprising:
- a semiconductor substrate material including a plurality of high-density dielectric-filled voids configured to reduce a dielectric constant of the semiconductor substrate material;
- and
- a plurality of metallic microwave transmission lines, at least one of which is positioned above said semiconductor substrate material and is operatively associated therewith.
An optical waveguide structure comprising:
- an optical mode region;
- and
- a supporting semiconductor material adjacent to said optical mode region, wherein said supporting material includes a plurality of microstructured voids formed therein that are configured to alter an effective index of refraction of said supporting material.
An optical waveguide structure according to claim 83 wherein said effective index of refraction depends on a density of the plurality of microstructured voids.
A heat exchanger system comprising:
- a heat generating device;
- a heat sink configured to dissipate heat to a surrounding medium;
- and
- an intermediate material mounted between said heat generating device and said heat sink, the intermediate material including a plurality of buried voids configured to alter thermal conductivity of said intermediate material.
Dependencies are inferred from the claim text.