Semiconductor device and method of manufacturing the same

A method of manufacturing a semiconductor device, comprising:

• forming a mesa structure and a peripheral surface extending around the mesa structure in a semiconductor layer, the mesa structure having a plateau shape with an upper surface and a side surface, while forming a Schottky electrode forming a Schottky junction with the upper surface;
• forming an insulating film extending from the peripheral surface, across the side surface, and onto the Schottky electrode;
• forming an opening in the insulating film through which the Schottky electrode is exposed;
• and
• forming a wiring electrode electrically connected to the Schottky electrode inside the opening, the wiring electrode extending from inside of the opening, across a portion of the insulating film formed on the side surface, and onto another portion of the insulating film formed on the peripheral surface.