Low temperature poly-silicon thin film transistor and fabrication method thereof, array substrate and display device

Abstract

A low temperature poly-silicon thin film transistor and a fabrication method thereof, an array substrate and a display device are provided. The method comprises: S1: sequentially forming an active layer (3), a gate insulation layer (4), a gate electrode (5) and an interlayer insulation layer (6) on a base substrate (1); S2: forming a first metal thin film layer (8); S3: performing a hydrogenation treatment on the active layer (3) and the gate insulation layer (6); S4: forming a second metal thin film layer (7), the second metal thin film layer (7) being used for forming a source electrode and a drain electrode.

Dependencies are inferred from the claim text.