Back to results
US 2016/0254383 A1Published application
Contact structure of semiconductor device
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsClement Hsingjen Wann, Ling-Yen Yeh, Chi-Yuan Shih, Yen-Yu Chen
Life of this patent
Estimating the term…
Abstract
The disclosure relates to a semiconductor device. An exemplary structure for a contact structure for a semiconductor device comprises a substrate comprising a major surface and a cavity below the major surface; a strained material in the cavity, wherein a lattice constant of the strained material is different from a lattice constant of the substrate; a Ge-containing dielectric layer over the strained material; and a metal layer over the Ge-containing dielectric layer.
Claims20
A device comprising:
- a first semiconductor fin extending above a substrate;
- a first strained material in a recess of the first semiconductor fin, the first strained material comprising a first element and a second element;
- a first dielectric layer over the first strained material, the first dielectric layer comprising the second element and a third element, the third element being oxygen or nitrogen, the first dielectric layer being free of the first element;
- and
- a first metal layer over the first dielectric layer.
2 more elements
A device comprising:
- a first fin extending above a substrate;
- a first isolation region surrounding the first fin, at least a first portion of the first fin extending above a top surface of the first isolation region;
- a first semiconductor material on the first fin, at least a portion of the first semiconductor material extending below the top surface of the first isolation region, the first semiconductor material comprising a first concentration of silicon and a second concentration of germanium;
- a first dielectric layer over the first semiconductor material, the first dielectric layer comprising a third concentration of silicon, a fourth concentration of germanium, and a treatment element, the treatment element being oxygen or nitrogen, the third concentration being zero, the first concentration of silicon being greater than the third concentration of silicon, the second concentration and the fourth concentration being greater than zero;
- and
- a first metal layer over the first dielectric layer.
3 more elements
A method comprising:
- forming a first semiconductor material in a recess of a substrate, the first semiconductor material comprising a first element and a second element;
- epitaxially growing a first layer over the first semiconductor material, the first layer comprising the second element;
- treating the first layer with a third element to form a first dielectric layer, the third element being oxygen or nitrogen;
- and
- depositing a first metal layer over the first dielectric layer.
2 more elements
Dependencies are inferred from the claim text.