Method of manufacturing a device having a shield plate dopant region

A method of manufacturing a transistor, the method comprising:

• forming a gate on a surface region of a semiconductor substrate, the gate having a sidewall that aligns with a gate region boundary, wherein the gate region boundary defines a lateral boundary for a channel region within the surface region under the gate;
• forming a drift dopant region within the surface region on a first side of the gate, wherein the drift dopant region extends from the gate region boundary;
• forming a set of electrically conductive shield plates that overlies the sidewall of the gate and a portion of the drift dopant region;
• forming a shield plate dopant region within the drift dopant region and underlying at least one shield plate of the set of shield plates;
• and
• forming a drain dopant region within the surface region on the first side of the gate, wherein the drift dopant region is disposed between the channel region and the drain dopant region.