Semiconductor device and method for manufacturing the same

A semiconductor device, comprising a semiconductor substrate that includes an IGBT region,

• wherein
• the semiconductor substrate includes a front surface and a rear surface,
• the IGBT region comprises:
• an emitter region being of n-type and exposed on the front surface;
• a body region being of p-type and in contact with the emitter region;
• a drift region being of n-type, located on a rear surface side with respect to the body region, and separated from the emitter region by the body region;
• and
• a collector region being of p-type, located on the rear surface side with respect to the drift region, separated from the body region by the drift region, and exposed on the rear surface,
• a gate electrode is located so as to face, via a gate insulating film, a part of the body region in a range separating the emitter region from the drift region,
• a first lifetime control layer extending along a planar direction of the semiconductor substrate is provided in a range in the drift region that is closer to the rear surface than an intermediate portion of the semiconductor substrate in a thickness direction of the semiconductor substrate,
• a crystal defect density in the first lifetime control layer is higher than any of a crystal defect density in a region adjacent to the first lifetime control layer on the rear surface side and a crystal defect density in a region adjacent to the first lifetime control layer on a front surface side, and
• a crystal defect density in a region between the first lifetime control layer and the rear surface is lower than a crystal defect density in a region between the first lifetime control layer and the front surface.